SPICE Simulation of Memristor Series and Parallel
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Abstract
Memory Resistors also known as Memristors, is a nonlinear resistor with memory. It is the fourth basic circuit element except resistor, capacitor and an inductor. The capability of memorizing its resistance makes its useful for designing of non volatile memory and in neural networks. This paper aims at study of Memristors characteristics. We first analyze and model the characteristics of Memristor with HSPICE and then study its behavior for series and parallel combination.
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Ahmer, M., Sajid, A., & Yasin, M. (2017). SPICE Simulation of Memristor Series and Parallel. SAMRIDDHI : A Journal of Physical Sciences, Engineering and Technology, 9(02), 89-92. https://doi.org/10.18090/samriddhi.v9i02.10867
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Research Article
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
References
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[6] M. D. Pickett, D. B. Strukov, J. L. Borghetti, J. J. Yang,
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[7] S. Kvatinsky, E. G. Friedman, A. Kolodny, and U.
C. Weiser, “TEAM: ThrEshold Adaptive Memristor
Model,” IEEE Transactions on Circuits and Systems I:
Regular Papers, 2012
[8] Z. Biolek, D. Biolek, and V. Biolkov´a. SPICE model
of memristor with nonlinear dopant drift.
Radioengineering J. , 18(2):211, 2009b.
IEEE Trans. on Circuit Theory, vol. 18, no. 5, pp. 507-
519, 1971.
[2] S. Kvatinsky, “Models of Memristor for SPICE
simulation” IEEE 27th Convention of Electrical and
Electronics Engineers in Israel, vol. 27, pp 213-218, 2012.
[3] Nalluri, S. K., & Parasaram, V. K. B. (2015). Automating
Software Builds with Jenkins: Design Patterns and Failure
Handling. International Journal of Technology,
Management and Humanities, 1(01), 16-33.
[4] S. Kvatinsky, E. G. Friedman, A. Kolodny, and U.
C. Weiser, “TEAM: ThrEshold Adaptive Memristor
Model,” IEEE Transactions on Circuits and Systems I:
Regular Papers, 2012
[5] E. Lehtonen and M. Laiho, “CNN Using Memristors for
Neighborhood Connections,” Proceedings of the
International Workshop on Cellular Nanoscale Networks
and their Applications, pp. 14, February 2010.
[6] M. D. Pickett, D. B. Strukov, J. L. Borghetti, J. J. Yang,
G. S. Snider, D. R. Stewart, and R. S. Williams,
“Switching Dynamics in Titanium Dioxide
Memristive Devices,” Journal of Applied Physics, Vol.
106, No. 7, pp. 16, October 2009.
[7] S. Kvatinsky, E. G. Friedman, A. Kolodny, and U.
C. Weiser, “TEAM: ThrEshold Adaptive Memristor
Model,” IEEE Transactions on Circuits and Systems I:
Regular Papers, 2012
[8] Z. Biolek, D. Biolek, and V. Biolkov´a. SPICE model
of memristor with nonlinear dopant drift.
Radioengineering J. , 18(2):211, 2009b.